Title :
High quality factor RF inductors using low loss conductor featured with skin effect suppression for standard CMOS/BiCMOS
Author :
Iramnaaz, I. ; Sandoval, T. ; Zhuang, Y. ; Schellevis, H. ; Rejaei, B.
Author_Institution :
Dept. of Electr. Eng., Wright State Univ., Dayton, OH, USA
Abstract :
Integrated on-chip inductors with high quality factors are demonstrated using a low loss artificial conductor technology. This concept is based on an artificial layered meta-material comprising a bi-layered Ni80Fe20/Cu superlattice. By properly tailoring the thickness ratio between the non-magnetic and magnetic metallic layers, the skin effects can be effectively suppressed within a wide frequency range, and can be tuned to a minimum at the frequency of interest up to 67 GHz. The quality factor has been increased by 41% of a 2nH inductor at 14.5GHz. The bandwidth of skin effect suppression is obtained between 10-18 GHz.
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; MMIC; Q-factor; copper; ferromagnetic materials; inductors; iron alloys; metallic superlattices; metamaterials; nickel alloys; Ni80Fe20-Cu; artificial layered metamaterial; frequency 10 GHz to 18 GHz; high-quality factor RF inductors; integrated on-chip inductors; low-loss conductor; magnetic metallic layers; skin effect suppression; standard CMOS/BiCMOS; superlattice; Conductors; Copper; Inductors; Permeability; Q factor; Skin effect; Superlattices;
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2011 IEEE 61st
Conference_Location :
Lake Buena Vista, FL
Print_ISBN :
978-1-61284-497-8
Electronic_ISBN :
0569-5503
DOI :
10.1109/ECTC.2011.5898508
