• DocumentCode
    1726770
  • Title

    Persistent photoconductivity as a tool for monitoring oxide clusters concentration in silicon wafers

  • Author

    Haddab, Y. ; Manic, D. ; Popovic, R.S.

  • Author_Institution
    Inst. of Microsyst., Swiss Federal Inst. of Technol., Lausanne, Switzerland
  • Volume
    2
  • fYear
    1997
  • Firstpage
    633
  • Abstract
    Many semiconductor devices rely on the so called “denuded zone” of the silicon wafers. It is therefore essential to have simple means to monitor the purity of this zone. It will be shown that persistent photoconductivity (PPC) can be related to the oxygen concentration in the wafer, and thus can be used to evaluate the quality of the denuded zone. A suitable test structure was designed and the PPC measurements performed. They clearly indicate that the intensity of the PPC effect is roughly proportional to the amount of oxygen clusters in the wafer
  • Keywords
    elemental semiconductors; impurities; oxygen; photoconductivity; silicon; PPC measurement; Si:O; denuded zone; oxide cluster concentration monitoring; persistent photoconductivity; purity monitoring; semiconductor device; silicon wafer; Bridge circuits; Conductivity; Electrical resistance measurement; Electron traps; Monitoring; Photoconductivity; Semiconductor devices; Silicon; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 1997. Proceedings., 1997 21st International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    0-7803-3664-X
  • Type

    conf

  • DOI
    10.1109/ICMEL.1997.632921
  • Filename
    632921