DocumentCode
1726770
Title
Persistent photoconductivity as a tool for monitoring oxide clusters concentration in silicon wafers
Author
Haddab, Y. ; Manic, D. ; Popovic, R.S.
Author_Institution
Inst. of Microsyst., Swiss Federal Inst. of Technol., Lausanne, Switzerland
Volume
2
fYear
1997
Firstpage
633
Abstract
Many semiconductor devices rely on the so called “denuded zone” of the silicon wafers. It is therefore essential to have simple means to monitor the purity of this zone. It will be shown that persistent photoconductivity (PPC) can be related to the oxygen concentration in the wafer, and thus can be used to evaluate the quality of the denuded zone. A suitable test structure was designed and the PPC measurements performed. They clearly indicate that the intensity of the PPC effect is roughly proportional to the amount of oxygen clusters in the wafer
Keywords
elemental semiconductors; impurities; oxygen; photoconductivity; silicon; PPC measurement; Si:O; denuded zone; oxide cluster concentration monitoring; persistent photoconductivity; purity monitoring; semiconductor device; silicon wafer; Bridge circuits; Conductivity; Electrical resistance measurement; Electron traps; Monitoring; Photoconductivity; Semiconductor devices; Silicon; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location
Nis
Print_ISBN
0-7803-3664-X
Type
conf
DOI
10.1109/ICMEL.1997.632921
Filename
632921
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