The Next Generation of HV-IGBTs with Low Loss and High SOA Capability

In order to improve the total performance of the 3300~6500 V high-voltage (HV) IGBT, a double combination concept is adopted: an "enhanced planar gate cell" for the emitter side and a "light punch-through (LPT)" structure for the collector side. The LPT-Planar IGBT demonstrates lower on-state voltage (V_CE(sat)), lower turn-off loss (E_OFF) and lower junction leakage current (>398 K) with higher safety operation area (SOA) capability than that of conventional Planar IGBT. In addition, this device achieves a widely operating junction temperature (i.e. 218 ~ 423 K) of the HV-IGBT without the snap-back phenomenon (<298 K) and thermal destruction (>398 K). From the viewpoint of low overall loss, high SOA capability and widely operating junction temperature, the LPT-Planar IGBT is a promising candidate for HV-IGBT.