Title :
A mechanism for gate oxide damage in nonuniform plasmas
Author :
Fang, Sychyi ; McVittie, James P.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
Plasma damage in the form of early breakdown observed after exposing antenna capacitor structures to an O/sub 2/ plasma in a single wafer resist asher is discussed. Plasma nonuniformity was characterized using a Langmuir probe. Using SPICE, a circuit model for the test structure, and the plasma measurements, the Fowler-Nordheim current through the thin oxide regions at different points on the wafer was calculated and found to agree well with the observed damage. The role of device structure can also be explained with this model. The damage was consistent with a hole induced breakdown mechanism.<>
Keywords :
SPICE; electric breakdown of solids; failure analysis; semiconductor process modelling; sputter etching; surface treatment; tunnelling; Fowler-Nordheim current; Langmuir probe; SPICE; antenna capacitor structures; circuit model; early breakdown; gate oxide damage; hole induced breakdown mechanism; nonuniform plasmas; plasma etching; plasma processing; single wafer resist asher; Electrons; Plasma applications; Plasma devices; Plasma materials processing; Plasma measurements; Plasma sheaths; Plasma temperature; Semiconductor device modeling; Surface charging; Voltage;
Conference_Titel :
Reliability Physics Symposium, 1993. 31st Annual Proceedings., International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-0782-8
DOI :
10.1109/RELPHY.1993.283310
