Title :
A lifetime projection method using series model and acceleration factors for TDDB failures of thin gate oxides
Author :
Shiono, Noboru ; Itsumi, Manabu
Author_Institution :
LSI Lab., NTT, Kanagawa, Japan
Abstract :
The series model combined with the Weibull distribution is shown to be suitable for characterizing time-dependent dielectric breakdown (TDDB) failures and for projecting the failure rate under normal operating conditions. The validity of existing models for acceleration factors is examined through long-term lifetests with a wide range of stress fields for 11-nm oxides. The resulting curve is found to estimate field acceleration more accurately for lower field regions. The activation energy is also essentially independent of oxide field for thin and near-defect-free oxides.<>
Keywords :
CMOS integrated circuits; VLSI; circuit reliability; electric breakdown of solids; failure analysis; life testing; metal-insulator-semiconductor devices; oxidation; semiconductor process modelling; 11 nm; CMOS VLSI; MOS capacitors; TDDB failures; Weibull distribution; acceleration factors; activation energy; lifetime projection method; long-term accelerated life tests; series model; thin gate oxides; Acceleration; Dielectric breakdown; Laboratories; Large scale integration; Life estimation; Predictive models; Statistical distributions; Stress; Temperature; Weibull distribution;
Conference_Titel :
Reliability Physics Symposium, 1993. 31st Annual Proceedings., International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-0782-8
DOI :
10.1109/RELPHY.1993.283312
