Title :
The optimal profile design for SJ-MOSFET fabricated by double-ion-implantation and multi-epitaxial method
Author :
Ono, Syotaro ; Saito, Wataru ; Izumisawa, Masaru ; Sumi, Yasuto ; Kurushima, Shoichiro ; Tsuji, Masataka ; Tokano, Ken´ichi ; Yamaguchi, Masakazu
Author_Institution :
Discrete Semicond. Div., Toshiba Corp., Kawasaki
Abstract :
We investigated the profile dependency of specific on-resistance (RonA) under high- temperature and high-current-density conditions for 600 V-class semi-superjunction MOSFETs fabricated by the double-ion-implantation and multi-epitaxial method, for the first time. The column doping profile is an important design parameter for the RonA characteristics because the profile affects the electron mobility (mue) in the drift region. The n-column profile was modulated by the column diffusion time (tdiff) in this experiment. The optimal tdiff achieved minimal RonA under the high-temperature and high-current-density conditions.
Keywords :
MOSFET; doping profiles; ion implantation; column diffusion time; column doping profile; double ion implantation; electron mobility; multiepitaxial method; optimal profile design; profile dependency; semisuperjunction MOSFET; voltage 600 V; Acoustic scattering; Current density; Degradation; Doping profiles; Electron mobility; Facsimile; Impurities; MOSFETs; Power semiconductor devices; Temperature dependence;
Conference_Titel :
Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1532-8
Electronic_ISBN :
978-1-4244-1533-5
DOI :
10.1109/ISPSD.2008.4538923
