• DocumentCode
    1726900
  • Title

    Super Junction MOSFETs above 600V with Parallel Gate Structure Fabricated by Deep Trench Etching and Epitaxial Growth

  • Author

    Sugi, A. ; Takei, M. ; Takahashi, K. ; Yajima, A. ; Tomizawa, H. ; Nakazawa, H.

  • Author_Institution
    Fuji Electr. Device Technol. Co., Ltd., Nagano
  • fYear
    2008
  • Firstpage
    165
  • Lastpage
    168
  • Abstract
    600 V class superjunction (SJ) MOSFETs fabricated by deep-trench etching and epitaxial growth method are experimentally investigated. Planar SJ MOSFETs with both parallel and orthogonal gate structures are fabricated. The SJ MOSFET with parallel gate structure exhibits an improved specific on-resistance of 17 mOmegaldrcm2, which is about 30% lower than that of orthogonal gate structures with the same breakdown voltage of 650 V.
  • Keywords
    electric breakdown; epitaxial growth; etching; power MOSFET; semiconductor junctions; breakdown voltage; deep trench etching; epitaxial growth; orthogonal gate structures; parallel gate structure; planar SJ MOSFETs; super junction MOSFETs; Epitaxial growth; Etching; Filling; MOSFETs; Power semiconductor devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
  • Conference_Location
    Orlando, FL
  • Print_ISBN
    978-1-4244-1532-8
  • Electronic_ISBN
    978-1-4244-1533-5
  • Type

    conf

  • DOI
    10.1109/ISPSD.2008.4538924
  • Filename
    4538924
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1726900