Title :
Super Junction MOSFETs above 600V with Parallel Gate Structure Fabricated by Deep Trench Etching and Epitaxial Growth
Author :
Sugi, A. ; Takei, M. ; Takahashi, K. ; Yajima, A. ; Tomizawa, H. ; Nakazawa, H.
Author_Institution :
Fuji Electr. Device Technol. Co., Ltd., Nagano
Abstract :
600 V class superjunction (SJ) MOSFETs fabricated by deep-trench etching and epitaxial growth method are experimentally investigated. Planar SJ MOSFETs with both parallel and orthogonal gate structures are fabricated. The SJ MOSFET with parallel gate structure exhibits an improved specific on-resistance of 17 mOmegaldrcm2, which is about 30% lower than that of orthogonal gate structures with the same breakdown voltage of 650 V.
Keywords :
electric breakdown; epitaxial growth; etching; power MOSFET; semiconductor junctions; breakdown voltage; deep trench etching; epitaxial growth; orthogonal gate structures; parallel gate structure; planar SJ MOSFETs; super junction MOSFETs; Epitaxial growth; Etching; Filling; MOSFETs; Power semiconductor devices;
Conference_Titel :
Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1532-8
Electronic_ISBN :
978-1-4244-1533-5
DOI :
10.1109/ISPSD.2008.4538924
