• DocumentCode
    1726983
  • Title

    III-V/Ge CMOS technologies on Si platform

  • Author

    Takagi, S. ; Takenaka, M.

  • Author_Institution
    Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2010
  • Firstpage
    147
  • Lastpage
    148
  • Abstract
    III-V/Ge CMOS on Si platform, realized by heterogeneous integration, is expected to provide a variety of applications from high speed logic CMOS to versatile SoC chips, where various functional devices can be co-integrated. Among them, we are currently pursuing high speed/low power logic CMOS using III-V/Ge channels. While many critical issues have been well recognized for them, we present possible solutions to break through these difficulties in this presentation.
  • Keywords
    CMOS logic circuits; III-V semiconductors; silicon; system-on-chip; III-V/Ge CMOS technologies; III-V/Ge channels; Si platform; heterogeneous integration; high speed logic CMOS; low power logic CMOS; versatile SoC chips; CMOS integrated circuits; CMOS technology; Indium gallium arsenide; Logic gates; MOSFETs; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSIT), 2010 Symposium on
  • Conference_Location
    Honolulu
  • Print_ISBN
    978-1-4244-5451-8
  • Electronic_ISBN
    978-1-4244-5450-1
  • Type

    conf

  • DOI
    10.1109/VLSIT.2010.5556205
  • Filename
    5556205