• DocumentCode
    1727011
  • Title

    III–V: Replacing Si or more than Moore?

  • Author

    Sun, Yanning

  • Author_Institution
    IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
  • fYear
    2010
  • Firstpage
    149
  • Lastpage
    150
  • Abstract
    Frequency scaling is coming to an end because of thermal limits as shown in Fig. 1. As an alternative nFET channel material, III-V compound semiconductor has been under intensive investigation in the recent years, hope to provide higher performance and lower power devices. In this paper, we review the status of current III-V research, and discuss the challenges and opportunities for “Moore” and “more than Moore” applications.
  • Keywords
    III-V semiconductors; field effect transistors; optical interconnections; III-V compound semiconductor; nFET channel material; HEMTs; International Electron Devices Meeting; Logic gates; MODFETs; MOSFETs; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSIT), 2010 Symposium on
  • Conference_Location
    Honolulu
  • Print_ISBN
    978-1-4244-5451-8
  • Electronic_ISBN
    978-1-4244-5450-1
  • Type

    conf

  • DOI
    10.1109/VLSIT.2010.5556206
  • Filename
    5556206
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1727011