Title :
Development of gallium nitride-based MEMS structures
Author :
Stonas, A.R. ; Turner, K.L. ; DenBaars, S.P. ; Hu, E.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
The fabrication of MEMS structures has generally depended on the ability to carry out highly selective, deep lateral and vertical etching of the component materials. This is particularly problematic in gallium nitride (GaN) and the associated AlGaN and InGaN materials, which are all noted for their chemical inertness. We report here a method for producing MEMS in this material system based on backside-illuminated photoelectrochemical (BIPEC) undercut wet etching. We also discuss resonance spectra of structures fabricated by this method, including cantilevers and membranes.
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium compounds; indium compounds; micromechanical devices; photoelectrochemistry; semiconductor devices; wide band gap semiconductors; AlGaN; InGaN; MEMS fabrication; backside-illuminated photoelectrochemical undercut wet etching; chemical inertness; gallium nitride-based MEMS structures; lateral etching; resonance spectra; vertical etching; Actuators; Capacitive sensors; Cathodes; Dry etching; Gallium nitride; Micromechanical devices; Optical materials; Optical sensors; Semiconductor materials; Wet etching;
Conference_Titel :
TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7731-1
DOI :
10.1109/SENSOR.2003.1216976
