Title :
Critical IGBT Design Regarding EMI and Switching Losses
Author :
Tsukuda, Masanori ; Omura, Ichiro ; Sakiyama, Yoko ; Yamaguchi, Masakazu ; Matsushita, Ken Ichi ; Ogura, Tsuneo
Author_Institution :
Semicond. Co., Toshiba Corp. l, Kawasaki
Abstract :
Critical N-base layer design in IGBT is discussed regarding electro-magnetic interference (EMI) and switching losses during turn-off. The newly proposed criteria for oscillation and avalanche induced loss were given by a simple equation model and the validity of the model has been confirmed with experimental results. This paper shows an efficient design method of N-base for EMI-free IGBT with considering the turn-off loss. In addition, EMI reduction structure with partly buried N layer in N-base was proposed for break through the design limit of N-base.
Keywords :
electromagnetic interference; insulated gate bipolar transistors; oscillations; N-base design; avalanche induced loss; critical IGBT design; electromagnetic interference; oscillation; switching loss; Application specific integrated circuits; Design methodology; Electromagnetic interference; Insulated gate bipolar transistors; Niobium; Poisson equations; Power semiconductor devices; Switching loss; Tail; Threshold voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1532-8
Electronic_ISBN :
978-1-4244-1533-5
DOI :
10.1109/ISPSD.2008.4538929
