GaN-on-Si: A scalable material system to realize cost effective next-generation solid state lighting and power devices

Over the last decade Gallium Nitride and its compound semiconductor derivatives that belong to the III-V system have demonstrated significant performance advantages in the area of light emitting diodes and high power devices. These have been enabled by their intrinsic wide band-gap of around 3.4 eV which manifest itself as enabling efficient light emission in the blue and green, as well as excellent transport properties (2DEG mobility of 1000-2000 cm²/Vs) enabling high power & frequency transport devices which can operate at high temperature with high breakdown voltages, enabling an entire set of devices to address power efficiency.