Title :
GaN-on-Si: A scalable material system to realize cost effective next-generation solid state lighting and power devices
Author :
Decoutere, S. ; Osman, H. ; Dekoster, J. ; Dutta, B. ; Biesemans, S.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
Over the last decade Gallium Nitride and its compound semiconductor derivatives that belong to the III-V system have demonstrated significant performance advantages in the area of light emitting diodes and high power devices. These have been enabled by their intrinsic wide band-gap of around 3.4 eV which manifest itself as enabling efficient light emission in the blue and green, as well as excellent transport properties (2DEG mobility of 1000-2000 cm2/Vs) enabling high power & frequency transport devices which can operate at high temperature with high breakdown voltages, enabling an entire set of devices to address power efficiency.
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; semiconductor device breakdown; wide band gap semiconductors; 2DEG mobility; III-V system; breakdown voltages; compound semiconductor derivatives; cost effective next-generation solid state lighting device; frequency transport devices; gallium nitride; light emission; light emitting diodes; power devices; power efficienc; scalable material system; transport property; wide band-gap; DH-HEMTs; Gallium nitride; Light emitting diodes; Logic gates; Silicon; Surface treatment;
Conference_Titel :
VLSI Technology (VLSIT), 2010 Symposium on
Conference_Location :
Honolulu
Print_ISBN :
978-1-4244-5451-8
Electronic_ISBN :
978-1-4244-5450-1
DOI :
10.1109/VLSIT.2010.5556207
