How can high mobility channel materials boost or degrade performance in advanced CMOS

Big hopes are still placed in high mobility materials such as III-V compound semiconductors. The key new elements that may moderate this belief are: degradation of DIBL, subthreshold slope and gate capacitance due to larger dielectric constant and smaller density of states in III-V materials. We will show how DIBL plays directly on performance, especially in LP technologies. This effect is now for the first time taken into account along with all other degradation sources associated with III-V channels. As a result, the gain in performance turns out to be much smaller than the expected 2X, and even become negative. This analysis also shows in which applications and conditions, the III-V channels exhibit their strengths the best.