Title :
A new low-voltage contrast mechanism to image local defects in very thin silicon dioxide films: true oxide electron beam induced current
Author :
Lau, W.S. ; Chan, D.S.H. ; Phang, J.C.H. ; Chow, K.W. ; Pey, K.S. ; Lim, Y.P. ; Cronquist, B.
Author_Institution :
Fac. of Eng., Nat. Univ. of Singapore, Singapore
Abstract :
A low-voltage contrast mechanism due to electron-hole pairs generated in the oxide by an electron beam was observed at electric fields lower than 3.5 MV/cm. This is in addition to the tunneling current microscopy (TCM) contrast mechanism observed at electric fields higher than 3.5 MV/cm. The new contrast mechanism is opposite in sign to the TCM contrast mechanism such that the image of a local thinning defect in the oxide is dark at low bias voltage and bright at higher bias voltage. Good contrast can be obtained at an electric field as low as 2.4 MV/cm. Potential applications include large area imaging of oxide defects and quantitative mapping of oxide thickness.<>
Keywords :
EBIC; crystal defects; electron beam effects; insulating thin films; silicon compounds; solid-state plasma; SiO/sub 2/ thin films; bias voltage; electron beam induced current; electron-hole pairs; large area imaging; local defects; local thinning defect; low-voltage contrast mechanism; tunneling current microscopy; Charge carrier processes; Copper; Electron beams; Failure analysis; Liquid crystals; Scanning electron microscopy; Semiconductor films; Silicon compounds; Substrates; Voltage;
Conference_Titel :
Reliability Physics Symposium, 1993. 31st Annual Proceedings., International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-0782-8
DOI :
10.1109/RELPHY.1993.283325
