Title :
Qualifying ICs for space environments with the help of parameters modeling
Author :
Shvetzov-Shilovsky, I.N. ; Belyakov, V.V. ; Cherepko, S.V. ; Pershenkov, V.S. ; Emelyanov, V.V.
Author_Institution :
Dept. of Microelectron., Eng. Phys. Inst., Moscow, Russia
Abstract :
The method for qualifying CMOS ICs for space total-dose environment is developed. It combines physical modeling and usual test protocol. The method provides realistic estimations for the dose level of parametric failure under low-dose-rate irradiation
Keywords :
CMOS integrated circuits; failure analysis; integrated circuit modelling; integrated circuit testing; radiation effects; space vehicle electronics; CMOS ICs; dose level; low-dose-rate irradiation; parameters modeling; parametric failure; physical modeling; space environments; test protocol; total-dose environment; Annealing; CMOS integrated circuits; CMOS process; Integrated circuit modeling; Predictive models; Protocols; Semiconductor device modeling; Temperature; Testing; Threshold voltage;
Conference_Titel :
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-3664-X
DOI :
10.1109/ICMEL.1997.632923
