Bistable resistor (biristor) - gateless silicon nanowire memory

A gateless NPN Si nanowire, which has been named `biristor´ originating from bistable resistor, is presented for a high-density and high-speed memory with a standard CMOS technology. A hysteric I-V characteristic is utilized for the data storage, exhibiting a write and read time of less than 2nsec, a sensing current window of 0.23mA, and a hold retention time of 200msec. The biristor is free of cyclic endurance/reliability problem induced by hot-carrier injection due to the gateless structure.