Title :
ESD Protection of NDMOS in 0.18μm High-Voltage CMOS Technology for Automotive Applications
Author :
Steinbeck, L. ; Pröhl, U. ; Frank, M. ; Konrad, A. ; Ellmers, C. ; Uhlig, T.
Author_Institution :
X-FAB Dresden GmbH & Co. KG, Dresden
Abstract :
The snapback trigger voltage of the NDMOS in a 0.18 μm automotive smart power technology is strongly reduced at large gate bias. This behavior of the deep-submicron multi-resurf NDMOS, which makes its ESD protection difficult and limits its electrical safe operating area, and the influence of various device modifications are investigated by TCAD simulation. SCR-based ESD protection schemes for I/O and power supply protection are presented. For supply protection the SCR is modified to increase its holding voltage. The ability to protect the NDMOS at non-zero gate bias is discussed.
Keywords :
CMOS integrated circuits; automotive electronics; power system protection; ESD protection; TCAD simulation; automotive smart power technology; deep-submicron multiresurf NDMOS; high-voltage CMOS technology; nonzero gate bias; power supply protection; size 0.18 mum; Automotive applications; Automotive engineering; CMOS technology; Electrostatic discharge; Pins; Power system protection; System testing; Thyristors; Trigger circuits; Voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1532-8
Electronic_ISBN :
978-1-4244-1533-5
DOI :
10.1109/ISPSD.2008.4538938
