Title :
Integration of 1200V SiC BJT With SiC Diode
Author :
Gao, Yan ; Huang, Alex Q. ; Agarwal, Anant K. ; Zhang, Qingchun
Author_Institution :
Semicond. Power Electron. Center (SPEC), North Carolina State Univ., Raleigh, NC
Abstract :
For the first time, the integration of 1200V SiC BJT with two types of SiC diode, PiN and MPS diode is designed, fabricated and characterized. Compared with the discrete anti-parallel diode, the integration solution will reduce the cost, size and packaging parasitic. The static characteristics show competitive BJT and diode performance in the integrated device as compared to discrete devices. The switching characteristics demonstrate the integrated MPS diode exhibits a 36.4% reduction in terms of peak reverse recovery value, and a 30% reduction on the reverse recovery charge as compared to the integrated PiN diode.
Keywords :
Schottky diodes; bipolar transistors; p-i-n diodes; silicon compounds; BJT; SiC; SiC diode; discrete anti-parallel diode; integrated MPS diode; integrated PiN diode; integrated device; peak reverse recovery value; Belts; Costs; Power electronics; Protection; Rectifiers; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon carbide; Voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1532-8
Electronic_ISBN :
978-1-4244-1533-5
DOI :
10.1109/ISPSD.2008.4538941
