Integration of 1200V SiC BJT With SiC Diode

Author

Gao, Yan ; Huang, Alex Q. ; Agarwal, Anant K. ; Zhang, Qingchun

Author_Institution

Semicond. Power Electron. Center (SPEC), North Carolina State Univ., Raleigh, NC

fYear

2008

Firstpage

233

Lastpage

236

Abstract

For the first time, the integration of 1200V SiC BJT with two types of SiC diode, PiN and MPS diode is designed, fabricated and characterized. Compared with the discrete anti-parallel diode, the integration solution will reduce the cost, size and packaging parasitic. The static characteristics show competitive BJT and diode performance in the integrated device as compared to discrete devices. The switching characteristics demonstrate the integrated MPS diode exhibits a 36.4% reduction in terms of peak reverse recovery value, and a 30% reduction on the reverse recovery charge as compared to the integrated PiN diode.

Keywords

Schottky diodes; bipolar transistors; p-i-n diodes; silicon compounds; BJT; SiC; SiC diode; discrete anti-parallel diode; integrated MPS diode; integrated PiN diode; integrated device; peak reverse recovery value; Belts; Costs; Power electronics; Protection; Rectifiers; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon carbide; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on

Conference_Location

Orlando, FL

Print_ISBN

978-1-4244-1532-8

Electronic_ISBN

978-1-4244-1533-5

Type

conf

DOI

10.1109/ISPSD.2008.4538941

Filename

4538941