DocumentCode
1727484
Title
Investigation of silicon device processes using scanning probe microscopy
Author
Radhakrishnan, M.K. ; Lee, Y.P. ; Poenar, D.P. ; Chai, T.C. ; Natarajan, M.
Author_Institution
Inst. of Microelectron., Singapore
Volume
2
fYear
1997
Firstpage
645
Abstract
This paper presents the results of analysis carried out on semiconductor wafers, devices and packaging materials using various modes of Scanning Probe Microscopy (SPM), along with a brief review of the existing requirements of characterization. Further, the new SPM technique, Scanning Capacitance Microscopy, and its application for dopant characterization in semiconductor devices is detailed
Keywords
characteristics measurement; doping profiles; elemental semiconductors; integrated circuit measurement; integrated circuit packaging; scanning probe microscopy; silicon; SPM technique; dopant characterization; packaging materials; scanning capacitance microscopy; scanning probe microscopy; semiconductor wafers; Atomic force microscopy; Atomic measurements; Chemicals; Pollution measurement; Scanning probe microscopy; Semiconductor devices; Semiconductor materials; Silicon devices; Surface topography; Thermal force;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location
Nis
Print_ISBN
0-7803-3664-X
Type
conf
DOI
10.1109/ICMEL.1997.632924
Filename
632924
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