Direct measurements, analysis, and post-fabrication improvement of noise margins in SRAM cells utilizing DMA SRAM TEG

A special device-matrix-array (DMA) TEG of 16k bit SRAM cells has been designed. Static noise margins (SNM) and 6 transistors in cells are directly measured and their fluctuations are examined. It is found for the first time that one-side SNM follows the normal distribution up to ±4σ. It is also found that the cell stability is worse than circuit simulation using V_th of measured 6 transistors. Furthermore, the post-fabrication self-convergence scheme by NBTI stress is applied to DMA SRAM TEG and the cell stability improvement is demonstrated experimentally for the first time.