DocumentCode :
1727552
Title :
High Conductivity δ-Doped Single Crystal Diamond Schottky m-i-p+ Diodes
Author :
Rashid, S.J. ; Udrea, F. ; Twitchen, D.J. ; Balmer, R.S. ; Amaratunga, G.A.J.
Author_Institution :
Eng. Dept., Univ. of Cambridge, Cambridge
fYear :
2008
Firstpage :
249
Lastpage :
252
Abstract :
High conductivity 2 kV single crystal diamond Schottky metal-intrinsic-p+ (m-i-p+) diodes utilising horizontally and vertically oriented thin highly boron-doped delta layers are presented in this work. Numerical analysis adopting diamond specific models previously reported indicate that these structural modifications drastically improve the forward performance of diamond Schottky diodes, realising current densities up to 50 A/cm2 for a forward bias of 3 V, without compromising the reverse performance of the device. This is a 20 fold performance improvement from the uniformly intrinsic diamond Schottky diode.
Keywords :
Schottky diodes; diamond; numerical analysis; semiconductor doping; delta-doped single crystal diamond Schottky m-i-p+ diodes; diamond Schottky diodes; forward bias; high conductivity Schottky m-i-p+ diodes; metal-intrinsic-p+ diodes; numerical analysis; thin highly boron-doped delta layers; Boron; Conducting materials; Conductivity; Crystalline materials; Current density; Gold; Ionization; Power semiconductor devices; Schottky diodes; Semiconductor diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1532-8
Electronic_ISBN :
978-1-4244-1533-5
Type :
conf
DOI :
10.1109/ISPSD.2008.4538945
Filename :
4538945
Link To Document :
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