Author :
Lee, S.H. ; Kim, M.S. ; Do, G.S. ; Kim, S.G. ; Lee, H.J. ; Sim, J.S. ; Park, N.G. ; Hong, S.B. ; Jeon, Y.H. ; Choi, K.S. ; Park, H.C. ; Kim, T.H. ; Lee, J.U. ; Kim, H.W. ; Choi, M.R. ; Lee, S.Y. ; Kim, Y.S. ; Kang, H.J. ; Kim, J.H. ; Kim, H.J. ; Son, Y.S.
Author_Institution :
Device & PI Technol. Group, Hynix Semicond. Inc., Icheon, South Korea
Abstract :
We focus here on the promising solutions to overcome thermal-induced erase failure of the unselected neighbor cell while a selected cell is being programmed to reset state with a high-current pulse. Our physical analysis directly demonstrate that this parasitic heating in Ge2Sb2Te5 based cell leads to partial crystallization in the amorphous reset state and to a consequent resistance decrease with disturbing current. Systematic approaches compatible with disturbance-free are addressed to achieve a highly scalable architecture, which can provide the physical and electrical criteria for phase change memory (PCM) up to 16nm technology node.
Keywords :
antimony compounds; germanium compounds; phase change memories; Ge2Sb2Te5; amorphous reset state; cell scaling; parasitic heating; phase change memory; programming disturbance; selected cell; size 16 nm; thermal-induced erase failure; unselected neighbor cell; Computer architecture; Microprocessors; Phase change materials; Programming; Space technology; Thermal resistance;
