High performance PRAM cell scalable to sub-20nm technology with below 4F2 cell size, extendable to DRAM applications

Author

Kim, I.S. ; Cho, S.L. ; Im, D.H. ; Cho, E.H. ; Kim, D.H. ; Oh, G.H. ; Ahn, D.H. ; Park, S.O. ; Nam, S.W. ; Moon, J.T. ; Chung, C.H.

Author_Institution

Semicond. R&D Div., Samsung Electron. Co., Ltd., Yongin, South Korea

fYear

2010

Firstpage

203

Lastpage

204

Abstract

A PRAM cell with great scalability and high speed operation capability with excellent reliability below 20nm technology was demonstrated. This has the meaning of the potential applicable to the technology area of scaling limitation of DRAM cell. We fabricated a confined PRAM cell with 7.5nm×17nm of below 4F². In particular, Sb-rich Ge-Sb-Te phase change material was employed for high speed operation below 30nsec. The excellent writing endurance performance was predicted to maintain up to 6.5E15cycles by reset program energy acceleration. Its data retention was 4.5 years at 85°C which is enough for DRAM application.

Keywords

DRAM chips; antimony; germanium; tellurium; DRAM applications; Ge-Sb-Te; PRAM cell; size 20 nm; temperature 85 degC; time 4.5 yr; Films; International Electron Devices Meeting; Phase change materials; Phase change random access memory; Resistance; Writing; Sb-rich Ge-Sb-Te PCM; dash-confined cell; endurance; retention;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSIT), 2010 Symposium on

Conference_Location

Honolulu

Print_ISBN

978-1-4244-5451-8

Electronic_ISBN

978-1-4244-5450-1

Type

conf

DOI

10.1109/VLSIT.2010.5556228

Filename

5556228