Highly-scalable novel access device based on Mixed Ionic Electronic conduction (MIEC) materials for high density phase change memory (PCM) arrays

Author

Gopalakrishnan, Kavitha ; Shenoy, R.S. ; Rettner, C.T. ; Virwani, K. ; Bethune, D.S. ; Shelby, R.M. ; Burr, G.W. ; Kelloc, A. ; King, R.S. ; Nguyen, K. ; Bowers, A.N. ; Jurich, M. ; Jackson, B. ; Friz, A.M. ; Topuria, T. ; Rice, P.M. ; Kurd, B.N.

Author_Institution

IBM Almaden Res. Center, San Jose, CA, USA

fYear

2010

Firstpage

205

Lastpage

206

Abstract

Phase change memory (PCM) could potentially achieve high density with large, 3Dstacked crosspoint arrays, but not without a BEOL-friendly access device (AD) that can provide high current densities and large ON/OFF ratios. We demonstrate a novel AD based on Cu-ion motion in novel Cu-containing Mixed Ionic Electronic Conduction (MIEC) materials[1, 2]. Experimental results on various device structures show that these ADs provide the ultra-high current densities needed for PCM, exhibit high ON/OFF ratios with excellent uniformity, are highly scalable, and are compatible with <;400°C Back-End-Of-the-Line (BEOL) fabrication.

Keywords

electrical conductivity; phase change memories; 3D stacked crosspoint arrays; BEOL-friendly access device; Cu-ion motion; back-end-of-the-line fabrication; high current densities; high density phase change memory arrays; highly-scalable novel access device; mixed ionic electronic conduction materials; Copper; Current density; Electrodes; Ions; Optimization; Phase change materials; Access device; Diode; MIEC; PCM; PCRAM;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSIT), 2010 Symposium on

Conference_Location

Honolulu

Print_ISBN

978-1-4244-5451-8

Electronic_ISBN

978-1-4244-5450-1

Type

conf

DOI

10.1109/VLSIT.2010.5556229

Filename

5556229