DocumentCode
1727741
Title
High doped drain double-Resurf 100V P-channel MOS on SOI 0.35 μm BCD technology
Author
Palumbo, Vincenzo ; Venturato, Mirko ; Gallo, Michele ; Pozzobon, Fiorella ; Galbiati, Maria Paola ; Contiero, Claudio
Author_Institution
FTM R&D, STMicroelectronics, Agrate Brianza
fYear
2008
Firstpage
283
Lastpage
286
Abstract
In this paper two different 100 V P-channel MOS structures on SOI 0.35 mum BCD technology have been compared. The higher drain doping for the drain extension PMOS with respect to the PDMOS is key to achieve not only good specific on-resistance but also robustness at high temperature reverse bias (HTRB) reliability test.
Keywords
BIMOS integrated circuits; CMOS integrated circuits; semiconductor doping; silicon-on-insulator; BCD technology; PMOS; SOI; p-channel MOS; size 0.35 micron; Breakdown voltage; Dielectrics; Doping; Isolation technology; Plasma displays; Power semiconductor devices; Research and development; Robustness; Silicon; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
Conference_Location
Orlando, FL
Print_ISBN
978-1-4244-1532-8
Electronic_ISBN
978-1-4244-1533-5
Type
conf
DOI
10.1109/ISPSD.2008.4538954
Filename
4538954
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