DocumentCode :
1727749
Title :
High-k/Ge p- & n-MISFETs with strontium germanide interlayer for EOT scalable CMIS application
Author :
Kamata, Yoshiki ; Ikeda, Keiji ; Kamimuta, Yuuichi ; Tezuka, Tsutomu
Author_Institution :
MIRAI-Toshiba, Kawasaki, Japan
fYear :
2010
Firstpage :
211
Lastpage :
212
Abstract :
High-k/Ge with strontium germanide interlayer has been applied for both p- and n-MISFETs. The observed Jg-EOT trend in the Ge-MISCAPs exhibits comparable or superior leakage characteristics to that of state-of-the-art HfSiON gate dielectrics on Si down to an EOT of 0.96nm. The drive current of the p-MISFETs increases with the EOT scaling around 1nm without μeff degradation. Furthermore, reasonable Vth values are observed in both p- and n-MISFETs. These results suggest applicability of the SrGex interlayer to high-k/Ge CMISFETs.
Keywords :
MISFET; germanium; semiconductor materials; strontium compounds; EOT scalable CMIS application; MISFET; drive current; gate dielectrics; strontium germanide interlayer; Degradation; FETs; High K dielectric materials; International Electron Devices Meeting; Logic gates; Silicon; Strontium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology (VLSIT), 2010 Symposium on
Conference_Location :
Honolulu
Print_ISBN :
978-1-4244-5451-8
Electronic_ISBN :
978-1-4244-5450-1
Type :
conf
DOI :
10.1109/VLSIT.2010.5556231
Filename :
5556231
Link To Document :
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