Title :
Electric field investigation in IGBT power modules
Author :
Frey, D. ; Schanen, Jl ; Augé, JL ; Lesaint, O.
Author_Institution :
Lab. d´´Electrotech. de Grenoble, CNRS, Grenoble, France
Abstract :
Power module reliability can be increased if problems due to high electric fields can be better understood. This paper proposes a global analysis using finite element simulations. Results are confirmed thanks to optical detection of partial discharge localization. Solutions to reduce field reinforcement are proposed and discussed. A discussion of maximum electric field handled by insulation gel is also provided.
Keywords :
finite element analysis; gels; insulated gate bipolar transistors; insulating materials; partial discharges; power bipolar transistors; semiconductor device models; IGBT power module; field reinforcement; finite element simulations; insulation gel; optical detection; partial discharge localization; Analytical models; Dielectric materials; Dielectric substrates; Dielectrics and electrical insulation; Finite element methods; Insulated gate bipolar transistors; Multichip modules; Optical detectors; Partial discharges; Voltage;
Conference_Titel :
Solid Dielectrics, 2004. ICSD 2004. Proceedings of the 2004 IEEE International Conference on
Print_ISBN :
0-7803-8348-6
DOI :
10.1109/ICSD.2004.1350568
