Title :
Experimental demonstration of high source velocity and its enhancement by uniaxial stress in Ge PFETs
Author :
Kobabyashi, Masaharu ; Mitard, Jerome ; Irisawa, Toshihumi ; Hoffmann, Thomas Y. ; Meuris, Marc ; Saraswat, Krishna ; Nishi, Yoshio ; Heyns, Marc
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
High-field transport in short channel (70 nm) Ge PFETs was, for the first time, thoroughly investigated, in terms of ballisticity and the relationship between carrier velocity and mobility, where 1.6×-2× higher velocity than that in Si PFETs was confirmed. The effectiveness of the uniaxial stress to velocity enhancement as a performance booster was experimentally demonstrated in short channel regime. 1.4× higher drive current can be achieved by strained Ge PFET in ballistic regime.
Keywords :
elemental semiconductors; field effect transistors; germanium; semiconductor device manufacture; silicon; Ge; PFET; Si; high source velocity; size 70 nm; uniaxial stress; velocity enhancement; Length measurement; Logic gates; Scattering; Silicon; Stress; Stress measurement; Voltage measurement;
Conference_Titel :
VLSI Technology (VLSIT), 2010 Symposium on
Conference_Location :
Honolulu
Print_ISBN :
978-1-4244-5451-8
Electronic_ISBN :
978-1-4244-5450-1
DOI :
10.1109/VLSIT.2010.5556233
