Title :
Enhancement-mode gan hybrid mos-hemts with ron,sp of 20 mω-cm2
Author :
Huang, W. ; Li, Z. ; Chow, T.P. ; Niiyama, Y. ; Nomura, T. ; Yoshida, S.
Author_Institution :
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY
Abstract :
We report on the experimental demonstration of a novel n-channel GaN hybrid MOS-HEMT realized on AlGaN/GaN heterostructure on sapphire substrate. This enhancement-mode MOS-gated heterojunction transistor, with 3 mum channel length and 20 mum RESURF length, exhibited a specific on-resistance as low as 20 mOmega-cm2. Simulations indicated the strong dependence of device breakdown voltage on the doping and concentration of the bottom p-GaN layer and its important role in reducing the surface electric field to suppress oxide breakdown.
Keywords :
high electron mobility transistors; AlGaN-GaN; device breakdown voltage; doping; enhancement-mode MOS-gated heterojunction transistor; high electron mobility transistor; hybrid MOS-HEMT; metal-oxide-semiconductor; oxide breakdown; surface electric field; Aluminum gallium nitride; FETs; Gallium nitride; HEMTs; MODFETs; Medical simulation; Power semiconductor devices; Substrates; Thermal conductivity; Voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1532-8
Electronic_ISBN :
978-1-4244-1533-5
DOI :
10.1109/ISPSD.2008.4538957
