DocumentCode :
1727851
Title :
New cost-effective integration schemes enabling analog and high-voltage design in advanced CMOS SOC technologies
Author :
Benaissa, K. ; Baldwin, G. ; Liu, S. ; Srinivasan, P. ; Hou, F. ; Obradovic, B. ; Yu, S. ; Yang, H. ; McMullan, R. ; Reddy, V. ; Chancellor, C. ; Venkataraman, S. ; Lu, H. ; Dey, S. ; Cirba, C.
Author_Institution :
Texas Instrum., Dallas, TX, USA
fYear :
2010
Firstpage :
221
Lastpage :
222
Abstract :
We present novel and cost effective integration schemes with high performance analog and high voltage components to enable system-on-chip (SOC) designs in advanced CMOS technologies. The new transistors have superior analog performance compared to the standard logic devices resulting in significant area savings and greater analog functionality. The new high voltage (HV) transistors enable reliable 6V capability with high performance for direct battery connection circuits and other high voltage applications. Additional cost-free components are also provided including fully isolated CMOS; ppoly-pwell capacitors and varactors; and high-gain npn and pnp bipolar transistors. All of these components are implemented in a standard digital process without mask adders like deep nwell (DNWELL), silicide block (SIBLK), or dedicated high voltage (HV) transistor implants that are commonly used in the industry for deep sub-micron SOC implementation.
Keywords :
CMOS digital integrated circuits; bipolar transistors; capacitors; system-on-chip; varactors; CMOS SOC technologies; analog design; analog functionality; area savings; cost-effective integration schemes; direct battery connection circuits; high voltage transistors; high-voltage design; npn bipolar transistors; pnp bipolar transistors; ppoly-pwell capacitors; standard digital process; system-on-chip designs; varactors; voltage 6 V; Adders; Capacitors; Implants; Logic gates; Noise; System-on-a-chip; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology (VLSIT), 2010 Symposium on
Conference_Location :
Honolulu
Print_ISBN :
978-1-4244-5451-8
Electronic_ISBN :
978-1-4244-5450-1
Type :
conf
DOI :
10.1109/VLSIT.2010.5556235
Filename :
5556235
Link To Document :
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