DocumentCode
1727881
Title
Design challenges and enablement for 28nm and 20nm technology nodes
Author
Hou, Cliff Yung-Chin
Author_Institution
Design & Technol. Platform, R&D, Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan
fYear
2010
Firstpage
225
Lastpage
226
Abstract
This paper presents technology and design challenges at 28nm and 20nm technology nodes, and provides solutions as key enablement for designers to effectively overcome those challenges.
Keywords
integrated circuit design; integrated circuit layout; integrated circuit technology; nanotechnology; IP design; design challenges; layout dependent effect; size 20 nm; size 28 nm; IP networks; Layout; Logic gates; Metals; Silicon; Technological innovation; Timing;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology (VLSIT), 2010 Symposium on
Conference_Location
Honolulu
Print_ISBN
978-1-4244-5451-8
Electronic_ISBN
978-1-4244-5450-1
Type
conf
DOI
10.1109/VLSIT.2010.5556237
Filename
5556237
Link To Document