DocumentCode
1727890
Title
Time-Periodic Avalanche Breakdown at the Edge Termination of Power Devices
Author
Knipper, U. ; Wachutka, G. ; Pfirsch, F. ; Raker, T. ; Niedermeyr, J.
Author_Institution
Inst. for Phys. of Electrotechnol., Munich Univ. of Technol., Munich
fYear
2008
Firstpage
307
Lastpage
310
Abstract
We show that the "variation of lateral doping" (VLD) edge termination technique (Fig. 1) exhibits a surprisingly high robustness in the avalanche regime. This is the consequence of a self-limiting time-periodic current filamentation mechanism, which prevents the VLD structure from being destroyed, in contrast to stable stationary current filaments staying permanently at the same location as it is observed in the commonly used "junction termination extension" (JTE) structure (Fig. 1). Our findings are based on detailed numerical device simulations, which are corroborated by measured data from test devices.
Keywords
avalanche breakdown; power semiconductor devices; junction termination extension; power devices edge termination; self-limiting time-periodic current filamentation mechanism; time-periodic avalanche breakdown; variation of lateral doping; Avalanche breakdown; Doping; Impact ionization; Infrared detectors; Insulated gate bipolar transistors; Numerical simulation; Photoelectricity; Temperature; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
Conference_Location
Orlando, FL
Print_ISBN
978-1-4244-1532-8
Electronic_ISBN
978-1-4244-1533-5
Type
conf
DOI
10.1109/ISPSD.2008.4538960
Filename
4538960
Link To Document