• DocumentCode
    1727890
  • Title

    Time-Periodic Avalanche Breakdown at the Edge Termination of Power Devices

  • Author

    Knipper, U. ; Wachutka, G. ; Pfirsch, F. ; Raker, T. ; Niedermeyr, J.

  • Author_Institution
    Inst. for Phys. of Electrotechnol., Munich Univ. of Technol., Munich
  • fYear
    2008
  • Firstpage
    307
  • Lastpage
    310
  • Abstract
    We show that the "variation of lateral doping" (VLD) edge termination technique (Fig. 1) exhibits a surprisingly high robustness in the avalanche regime. This is the consequence of a self-limiting time-periodic current filamentation mechanism, which prevents the VLD structure from being destroyed, in contrast to stable stationary current filaments staying permanently at the same location as it is observed in the commonly used "junction termination extension" (JTE) structure (Fig. 1). Our findings are based on detailed numerical device simulations, which are corroborated by measured data from test devices.
  • Keywords
    avalanche breakdown; power semiconductor devices; junction termination extension; power devices edge termination; self-limiting time-periodic current filamentation mechanism; time-periodic avalanche breakdown; variation of lateral doping; Avalanche breakdown; Doping; Impact ionization; Infrared detectors; Insulated gate bipolar transistors; Numerical simulation; Photoelectricity; Temperature; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
  • Conference_Location
    Orlando, FL
  • Print_ISBN
    978-1-4244-1532-8
  • Electronic_ISBN
    978-1-4244-1533-5
  • Type

    conf

  • DOI
    10.1109/ISPSD.2008.4538960
  • Filename
    4538960