Title :
High performance design with advanced features in 22nm and beyond
Author_Institution :
Intel Corp., Hillsboro, OR, USA
Abstract :
This paper describes design challenges in utilizing advanced features, such as fully depleted transistors, compound semiconductors, embedded memory, and 3D integration, and evaluates their benefits.
Keywords :
integrated circuit design; 3D integration; advanced features; compound semiconductors; embedded memory; fully depleted transistors; high performance design; Compounds; Design methodology; Microprocessors; Performance evaluation; Silicon; Three dimensional displays; Transistors;
Conference_Titel :
VLSI Technology (VLSIT), 2010 Symposium on
Conference_Location :
Honolulu
Print_ISBN :
978-1-4244-5451-8
Electronic_ISBN :
978-1-4244-5450-1
DOI :
10.1109/VLSIT.2010.5556238
