Title :
The 2nd Generation divided RESURF structure for High Voltage ICs
Author :
Shimizu, Kazuhiro ; Terashima, Tomohide
Author_Institution :
Power Device Works, Mitsubishi Electr. Corp., Fukuoka
Abstract :
The 2nd generation divided RESURF structure has been developed by applying a P- substrate-on-P- epitaxial layer and micro- N+ buried layer (micro-NB) provided at the edge region of the N+ buried layer (NB). The micro-NB reduces the electric field around its own area, and it improves the breakdown voltage with no additional area. Beside, the 2nd generation divided RESURF structure has no effect on the breakdown voltage, because the divide RESURF structure is designed that the depletion layer enough reduces its own electric field.
Keywords :
integrated circuits; 2nd generation divided RESURF structure; breakdown voltage; depletion layer; electric field; high voltage IC; integrated circuits; Breakdown voltage; Dielectrics; Electronic mail; Epitaxial layers; Intelligent structures; Multichip modules; Niobium; Power generation; Power semiconductor devices; Substrates;
Conference_Titel :
Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1532-8
Electronic_ISBN :
978-1-4244-1533-5
DOI :
10.1109/ISPSD.2008.4538961
