DocumentCode :
1727951
Title :
Investigation on pulsed surface discharge phenomena of silicon in atmosphere
Author :
Zhao, Wen-Bin ; Zhang, Guan-Jun ; Xie, Liang ; Yan, Zhang
Author_Institution :
Sch. of Electr. Eng., Xi´´an Jiaotong Univ., China
Volume :
2
fYear :
2004
Firstpage :
888
Abstract :
Based on the measurement of voltage and current waveforms and the optical observation, the pulsed surface discharge phenomena across silicon samples were examined in atmospheric air. The surface of each sample was preprocessed by different mechanical or chemical methods, and some influences of surface condition on experimental results were discussed. Some interesting phenomena were reported. It was suggested that charge carriers (electrons and holes) were injected into the surface states of silicon. At a critical applied voltage, injected electrons could be detrapped and also lead to secondary electron emission and the desorption of adsorbed gases. Electrode metal particles may fly out and land on the surface of silicon. These processes would greatly affect the development of surface discharge. These assumptions need to be further confirmed.
Keywords :
adsorption; charge injection; electron stimulated desorption; electron traps; elemental semiconductors; high field effects; hole traps; secondary electron emission; silicon; surface discharges; surface states; surface treatment; Si; adsorbed gases; atmospheric air; charge carriers; chemical methods; current waveform measurement; desorption; detrapped electron injection; electrode metal particles; electron carrier; hole carrier; mechanical methods; optical observation; pulsed surface discharge process; secondary electron emission; silicon surface; surface states; voltage measurement; Atmosphere; Atmospheric measurements; Current measurement; Electron emission; Optical pulses; Optical surface waves; Pulse measurements; Silicon; Surface discharges; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid Dielectrics, 2004. ICSD 2004. Proceedings of the 2004 IEEE International Conference on
Print_ISBN :
0-7803-8348-6
Type :
conf
DOI :
10.1109/ICSD.2004.1350574
Filename :
1350574
Link To Document :
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