• DocumentCode
    1727973
  • Title

    Phenomenological understanding of Sn migration in ceramic-chip capacitors

  • Author

    Raman, Arun ; Sahasrabudhe, Shubhada ; Dietz, Lyndell ; Hossain, Mohammad

  • Author_Institution
    Intel Corp., Chandler, AZ, USA
  • fYear
    2011
  • Firstpage
    541
  • Lastpage
    546
  • Abstract
    Electrochemical migration (ECM) is a well documented phenomenon in literature involving the transport of metal ions under the influence of voltage and in the presence of an electrolyte. This paper describes the classic Sn migration phenomenon that occurs with SAC305 solder used to attach capacitors on Intel´s microelectronic packages, under accelerated humidity voltage tests. Additional lab-scale surface insulation resistance (SIR) tests, which replicated the accelerated test failures, were performed to understand the impact of moisture level, the critical voltage required and effect of ionic environment on the Sn migration phenomenon. As capacitor sizes continue to get smaller, leading to a greater risk of solder metal migration with electrode lines getting closer to each other, results from this study can be expected to improve the design of packages in future technologies.
  • Keywords
    ceramic capacitors; electrolytes; electromigration; integrated circuit packaging; solders; Intel microelectronic packages; SAC305 solder; Sn migration; accelerated test failures; ceramic-chip capacitors; electrochemical migration; electrolyte; humidity voltage tests; lab-scale surface insulation resistance tests; metal ions; Capacitors; Cathodes; Electronic countermeasures; Ions; Moisture; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2011 IEEE 61st
  • Conference_Location
    Lake Buena Vista, FL
  • ISSN
    0569-5503
  • Print_ISBN
    978-1-61284-497-8
  • Electronic_ISBN
    0569-5503
  • Type

    conf

  • DOI
    10.1109/ECTC.2011.5898564
  • Filename
    5898564