DocumentCode
1727995
Title
3D Sensor application with open through silicon via technology
Author
Kraft, J. ; Schrank, F. ; Teva, J. ; Siegert, J. ; Koppitsch, G. ; Cassidy, C. ; Wachmann, E. ; Altmann, F. ; Brand, S. ; Schmidt, C. ; Petzold, M.
Author_Institution
Austriamicrosystems AG, Graz, Austria
fYear
2011
Firstpage
560
Lastpage
566
Abstract
Today 3D interconnection approaches are considered to provide one of the most promising enabling technologies for “More than Moore” solutions. In particular, 3D integration can provide significant progress in semiconductor device development regarding increased system functionality and integration density. In this paper, we describe an innovative concept for sensor integration based on a quality-proven “open” TSV technology on the basis of a 0.35μm CMOS process.
Keywords
CMOS integrated circuits; elemental semiconductors; integrated circuit interconnections; sensors; silicon; three-dimensional integrated circuits; 3D interconnection; 3D sensor application; CMOS; Moore; TSV technology; semiconductor device development; size 0.35 mum; through-silicon-via technology; CMOS integrated circuits; Metallization; Passivation; Resists; Silicon; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2011 IEEE 61st
Conference_Location
Lake Buena Vista, FL
ISSN
0569-5503
Print_ISBN
978-1-61284-497-8
Electronic_ISBN
0569-5503
Type
conf
DOI
10.1109/ECTC.2011.5898567
Filename
5898567
Link To Document