Title :
3D Sensor application with open through silicon via technology
Author :
Kraft, J. ; Schrank, F. ; Teva, J. ; Siegert, J. ; Koppitsch, G. ; Cassidy, C. ; Wachmann, E. ; Altmann, F. ; Brand, S. ; Schmidt, C. ; Petzold, M.
Author_Institution :
Austriamicrosystems AG, Graz, Austria
Abstract :
Today 3D interconnection approaches are considered to provide one of the most promising enabling technologies for “More than Moore” solutions. In particular, 3D integration can provide significant progress in semiconductor device development regarding increased system functionality and integration density. In this paper, we describe an innovative concept for sensor integration based on a quality-proven “open” TSV technology on the basis of a 0.35μm CMOS process.
Keywords :
CMOS integrated circuits; elemental semiconductors; integrated circuit interconnections; sensors; silicon; three-dimensional integrated circuits; 3D interconnection; 3D sensor application; CMOS; Moore; TSV technology; semiconductor device development; size 0.35 mum; through-silicon-via technology; CMOS integrated circuits; Metallization; Passivation; Resists; Silicon; Through-silicon vias;
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2011 IEEE 61st
Conference_Location :
Lake Buena Vista, FL
Print_ISBN :
978-1-61284-497-8
Electronic_ISBN :
0569-5503
DOI :
10.1109/ECTC.2011.5898567
