Title :
High mobility III–V-on-insulator MOSFETs on Si with ALD-Al2O3 BOX layers
Author :
Yokoyama, M. ; Urabe, Y. ; Yasuda, T. ; Takagi, H. ; Ishii, H. ; Miyata, N. ; Yamada, H. ; Fukuhara, N. ; Hata, M. ; Sugiyama, M. ; Nakano, Y. ; Takenaka, M. ; Takagi, S.
Author_Institution :
Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan
Abstract :
We have successfully demonstrated III-V-semiconductor-on-insulator (III-V-OI) MOSFETs with ALD-Al2O3 buried oxide (BOX) layers under front-gate operation, for the first time. The high electron mobilities of ~3000 and ~2000 cm2/Vs were achieved for i-InGaAs and p-InGaAs channels, respectively, formed on Al2O3/Si. Also, we have found that the InGaAs-OI channel bottom condition (the InGaAs-OI/BOX interface) is quite important for the device performance through improvements by adapting ALD-Al2O3 and S passivation, resulting in high electron mobility of ~4000 cm2/Vs under back-gate operation.
Keywords :
III-V semiconductors; MOSFET; aluminium compounds; indium compounds; silicon; ALD-Al2O3 buried oxide layers; Al2O3; InGaAs; InGaAs-OI channel bottom condition; InGaAs-OI/BOX interface; Si; front-gate operation; hgh mobility III-V-on-insulator MOSFET; high electron mobilities; i-InGaAs channels; p-InGaAs channels; Aluminum oxide; Bonding; Indium gallium arsenide; Logic gates; MOSFETs; Passivation; Silicon;
Conference_Titel :
VLSI Technology (VLSIT), 2010 Symposium on
Conference_Location :
Honolulu
Print_ISBN :
978-1-4244-5451-8
Electronic_ISBN :
978-1-4244-5450-1
DOI :
10.1109/VLSIT.2010.5556241
