Title :
Reliability of 20μm micro bump interconnects
Author :
You, Ha-Young ; Lee, Yoon-Soo ; Lee, Sang-Keun ; Kang, Ju-Seong
Author_Institution :
Memory Div., Samsung Electron., Hwasung, South Korea
Abstract :
The purpose of this paper is to study reliability evaluation of fine pitch micro bump. In this work, hot temperature storage(HTS) test and electromigration(EM) test were performed for reliability evaluation. We compared microstructure of 20um diameter fine pitch micro bump at 150°C and 180°C. Also, Ni3Sn4 IMC growth rate and Ni UBM dissolution rate at 180 □ were investigated. For HTS 180°C, resistance starts to degrade after 1000 hours. We found that open failure occurred when Ni UBM completely consumed and time to failure is consistent with total consumption time of Ni UBM. In addition, micro bumps shows strong EM resistance.
Keywords :
electromigration; fine-pitch technology; integrated circuit interconnections; integrated circuit reliability; nickel alloys; tin alloys; IMC growth rate; Ni3Sn4; UBM dissolution rate; electromigration test; fine pitch microbump; hot temperature storage test; microbump interconnects; open failure; reliability evaluation; size 20 mum; temperature 150 C; temperature 180 C; Current density; Electromigration; High temperature superconductors; Microstructure; Nickel; Resistance; Temperature measurement;
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2011 IEEE 61st
Conference_Location :
Lake Buena Vista, FL
Print_ISBN :
978-1-61284-497-8
Electronic_ISBN :
0569-5503
DOI :
10.1109/ECTC.2011.5898575
