Title :
Operation of GaAs MESFETs at cryogenic temperatures
Author :
Liang, C.L. ; Wong, H. ; Cheung, N.W.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
The device performance of GaAs MESFETs at both quadratic and subthreshold regions was investigated for temperatures ranging from 350 K to 80 K. The measurements at the quadratic region can be described by the empirical hyperbolic tangent model. The device parameters of the model vary with operating temperature. At the subthreshold region, a physical model for the subthreshold drain current of GaAs MESFETs was developed on the basis of an electron-diffusion mechanism. The model was verified by measurements on devices of various gate lengths for different drain and gate bias conditions in the operating temperature range from 350 K to 80 K
Keywords :
III-V semiconductors; Schottky gate field effect transistors; cryogenics; gallium arsenide; semiconductor device models; 80 to 350 K; GaAs; cryogenic temperatures; electron-diffusion mechanism; gate bias; gate lengths; hyperbolic tangent model; operating temperature range; physical model; quadratic region; subthreshold drain current; subthreshold regions; Analytical models; Cryogenics; Electrons; Gallium arsenide; Length measurement; MESFETs; Subthreshold current; Temperature distribution; Threshold voltage; Transconductance;
Conference_Titel :
Low Temperature Semiconductor Electronics, 1989., Proceedings of the Workshop on
Conference_Location :
Burlington, VT
DOI :
10.1109/LTSE.1989.50175
