DocumentCode :
1728248
Title :
High coupling coefficient Temperature compensated FBAR resonator for oscillator application with wide pulling range
Author :
Zou, Qiang ; Lee, Donald ; Bi, Frank ; Ruby, Richard ; Small, Martha ; Ortiz, Steve ; Oshmyansky, Yury ; Kaitila, Jyrki
Author_Institution :
Wireless Semicond. Div., Avago Technol. US Inc., Fort Collins, CO, USA
fYear :
2010
Firstpage :
646
Lastpage :
651
Abstract :
This paper demonstrates two variations of Temperature compensated (TempCo) FBAR resonators with high Kt2. One 1.5 GHz non-symmetric stack design TempCo FBAR resonator has a Kt2 of 4.28% and linear TCF of 0 ppm/°C. A second, quasi-symmetric stack design 1.5GHz TempCo FBAR resonator has Kt2 as high as 5.6% and linear TCF of -6 ppm/°C. Significant Kt2 improvement comes from optimal design of stack film, interposer electrode effect and novel process development of a sealant for the oxide to protect it from HF etching. This paper also discusses the trade-off between two parameters (linear TCF vs. Kt2). High Kt2 TempCo FBAR resonator is ideal for FBAR oscillator application with wide frequency pulling range.
Keywords :
acoustic resonators; oscillators; HF etching; frequency 1.5 GHz; high coupling coefficient temperature; interposer electrode effect; nonsymmetric stack design FBAR resonator; oscillator application; stack film; wide frequency pulling range; Couplings; Electrodes; Etching; Film bulk acoustic resonators; Impedance; Oscillators; Simulation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Frequency Control Symposium (FCS), 2010 IEEE International
Conference_Location :
Newport Beach, CA
ISSN :
1075-6787
Print_ISBN :
978-1-4244-6399-2
Type :
conf
DOI :
10.1109/FREQ.2010.5556250
Filename :
5556250
Link To Document :
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