Title :
Correspondence between gated-diode drain current and charge pumping current in hot-carrier stressed n- and p-MOSFET´s
Author :
Goh, Y.H. ; Ah, L.K. ; Ling, C.H.
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
Hot-carrier degradation in n- and p-MOSFET´s is investigated using the forward gated-diode drain current and charge pumping current measurements. A linear relation is experimentally found between the maximum forward gated diode current Idf and the corresponding maximum charge pumping current Icp in the devices after hot-carrier stress. A close correspondence between the two currents is demonstrated
Keywords :
MOSFET; electric current; hot carriers; interface states; charge pumping current; gated-diode drain current; hot-carrier stress; n-MOSFET; p-MOSFET; Charge pumps; Current measurement; Degradation; Hot carriers; Leakage current; MOSFET circuits; Radiative recombination; Stress; Substrates; Voltage;
Conference_Titel :
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-3664-X
DOI :
10.1109/ICMEL.1997.632931
