• DocumentCode
    1728363
  • Title

    Correspondence between gated-diode drain current and charge pumping current in hot-carrier stressed n- and p-MOSFET´s

  • Author

    Goh, Y.H. ; Ah, L.K. ; Ling, C.H.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
  • Volume
    2
  • fYear
    1997
  • Firstpage
    659
  • Abstract
    Hot-carrier degradation in n- and p-MOSFET´s is investigated using the forward gated-diode drain current and charge pumping current measurements. A linear relation is experimentally found between the maximum forward gated diode current Idf and the corresponding maximum charge pumping current Icp in the devices after hot-carrier stress. A close correspondence between the two currents is demonstrated
  • Keywords
    MOSFET; electric current; hot carriers; interface states; charge pumping current; gated-diode drain current; hot-carrier stress; n-MOSFET; p-MOSFET; Charge pumps; Current measurement; Degradation; Hot carriers; Leakage current; MOSFET circuits; Radiative recombination; Stress; Substrates; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 1997. Proceedings., 1997 21st International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    0-7803-3664-X
  • Type

    conf

  • DOI
    10.1109/ICMEL.1997.632931
  • Filename
    632931
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1728363