DocumentCode :
1728397
Title :
Active pixel sensors on high resistivity silicon and their readout
Author :
Chen, W. ; De Geronimo, G. ; Li, Z. ; O´Connor, Patrick ; Radeka, V. ; Rehak, P. ; Smith, G.C. ; Yu, B.
Author_Institution :
Brookhaven Nat. Lab., Upton, NY, USA
Volume :
2
fYear :
2001
Firstpage :
980
Abstract :
The concept of an X-ray active matrix pixel sensor (XAMPS) is introduced. XAMPSs are direct illumination, position sensitive X-ray detectors with about one million pixels. They count the number of diffracted X-rays in each pixel by measuring the total charge released by converted X-rays in the body of the sensor. Readout is accomplished with a relatively small number of channels equal to the square root of the number of pixels. The estimated readout time is about 1 ms. Noise of the readout electronics can be so low that practically no additional fluctuations in the number of incident X-rays per pixel are added and therefore the XAMPS performance is very close to that of an ideal detector for X-ray crystallography.
Keywords :
X-ray crystallography; nuclear electronics; position sensitive particle detectors; readout electronics; silicon radiation detectors; Si; X-ray active matrix pixel sensor; X-ray crystallography; X-ray protein crystallography; XAMPS; high resistivity Si; noise; position sensitive X-ray detectors; readout electronics; readout time; Charge measurement; Conductivity; Current measurement; Fluctuations; Lighting; Matrix converters; Readout electronics; Silicon; X-ray detectors; X-ray diffraction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium Conference Record, 2001 IEEE
ISSN :
1082-3654
Print_ISBN :
0-7803-7324-3
Type :
conf
DOI :
10.1109/NSSMIC.2001.1009718
Filename :
1009718
Link To Document :
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