Title :
A single-crystal silicon symmetrical and decoupled gyroscope on insulating substrate
Author :
Alper, S.E. ; Akin, T.
Author_Institution :
Dept. of Electr. & Electron. Eng., Middle East Tech. Univ., Ankara, Turkey
Abstract :
This paper presents a single-crystal silicon symmetrical and decoupled (SYMDEC) gyroscope implemented using dissolved wafer process on an insulating substrate. The symmetric structure allows matched resonant frequencies for the drive and sense vibration modes for high rate sensitivity and low temperature-dependent drift, while the decoupled drive and sense modes prevents unstable operation due to mechanical coupling, achieving a low bias drift. The 12-15 /spl mu/m-thick single-crystal silicon structural layer with an aspect ratio about 10 using DRIE patterning provides a high sense capacitance of 130fF, while the insulating substrate provides a low parasitic capacitance of only 20fF. Drive and sense mode resonance frequencies of the gyroscope are measured to be 39,010 Hz and 38,570 Hz, respectively. Measurement results reveal that the gyroscope provides a rate sensitivity of 0.01 deg/sec in 50 Hz bandwidth at vacuum.
Keywords :
capacitance; elemental semiconductors; gyroscopes; sensitivity; silicon; sputter etching; 12 to 15 micron; 130 fF; 20 fF; 38570 Hz; 39010 Hz; Si; aspect ratio; bias drift; decoupled drive; decoupled gyroscope; dissolved wafer process; drive; insulating substrate; mechanical coupling; resonant frequencies; sense vibration modes; sensitivity; single crystal silicon; symmetrical gyroscope; temperature-dependent drift; Drives; Electrodes; Gyroscopes; Insulation; Parasitic capacitance; Resonance; Resonant frequency; Silicon; Suspensions; Vibrations;
Conference_Titel :
TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7731-1
DOI :
10.1109/SENSOR.2003.1217036