Title :
A numerical study of the temperature dependence of the unity gain frequency of silicon bipolar transistors
Author :
Chrzanowska-Jeske, Malgorzata ; Jaeger, Richard C.
Author_Institution :
Dept. of Electr. Eng., Auburn Univ., AL, USA
Abstract :
The dependence of the unity gain frequency fT of a silicon double-diffused bipolar transistor on temperature and collector current density at 77-300 K is discussed. The fT characteristics are generated by the low-temperature bipolar transistor simulator BILOW. Physical explanations of the fT plots are given on the basis of simulated distributions of various internal parameters of the bipolar transistor. The temperature dependence of fT is found to be strongly influenced by the charge of the minority carriers trapped in the base on the compensated impurity atoms. The electric-field distribution within the base is changed as a result of the additional charge
Keywords :
bipolar transistors; minority carriers; numerical analysis; semiconductor device models; 77 to 300 K; BILOW; Si; bipolar transistors; collector current density; compensated impurity atoms; electric-field distribution; internal parameters; minority carriers; numerical study; simulator; temperature dependence; unity gain frequency; Bipolar transistors; Character generation; Current density; Delay effects; Electron traps; Frequency; Impurities; Microelectronics; Silicon; Temperature dependence;
Conference_Titel :
Low Temperature Semiconductor Electronics, 1989., Proceedings of the Workshop on
Conference_Location :
Burlington, VT
DOI :
10.1109/LTSE.1989.50177
