Title :
Polarization control of InAs quantum dot semiconductor laser using external light injection technique
Author :
Peng, P.C. ; Lan, R.L. ; Hsu, S.T. ; Lu, H.H. ; Lin, G. ; Kuo, H.C. ; Lin, G.R. ; Chi, J.Y.
Author_Institution :
Dept. of Electro-Opt. Eng., Nat. Taipei Univ. of Technol., Taipei, Taiwan
Abstract :
This work investigates experimentally the polarization control of InAs-InGaAs quantum dot (QD) semiconductor laser. The polarization characteristic of QD laser at different bias current is studied. The results of this study will be useful in the field of optical signal processing.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; light polarisation; optical control; quantum dot lasers; InAs-InGaAs; Polarization; bias current; external light injection; optical signal processing; polarization control; quantum dot semiconductor laser; Optical attenuators; Optical polarization; Optical signal processing; Quantum dot lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Optical MEMS and Nanophotonics (OPT MEMS), 2010 International Conference on
Conference_Location :
Sapporo
Print_ISBN :
978-1-4244-8926-8
Electronic_ISBN :
978-1-4244-8925-1
DOI :
10.1109/OMEMS.2010.5672130
