DocumentCode :
1729008
Title :
Optimized interface electronics and transduction mechanisms for high sensitivity photodiode structures
Author :
Greegor, J.R. ; Yotter, R.A. ; Wilson, D.M.
Author_Institution :
Dept. of Electr. Eng., Univ. of Washington, Seattle, WA, USA
Volume :
2
fYear :
2003
Firstpage :
1454
Abstract :
A low noise, high sensitivity resonant photodetector was realized using an interdigitated silicon photodiode and integrated oscillator circuitry. By placing the photodiode in a resonant loop and using an innovative transduction mechanism, an improvement in the noise performance of the device is observed. Specifically, an increase of 10% in signal to noise ratio is observed of the resonant device over the same device (photodiode) operated at DC.
Keywords :
elemental semiconductors; feedback oscillators; flicker noise; photodetectors; photodiodes; semiconductor device noise; silicon; voltage-controlled oscillators; DC operation; Si; high sensitivity resonant photodiode; innovative transduction mechanism; integrated oscillator circuitry; interdigitated silicon photodiode; noise performance; optimized interface electronics; resonant loop; signal-noise ratio; 1f noise; Capacitance; Circuit noise; Noise reduction; Photodetectors; Photodiodes; RLC circuits; Resonance; Ring oscillators; Spatial resolution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7731-1
Type :
conf
DOI :
10.1109/SENSOR.2003.1217050
Filename :
1217050
Link To Document :
بازگشت