Optimized interface electronics and transduction mechanisms for high sensitivity photodiode structures

Author

Greegor, J.R. ; Yotter, R.A. ; Wilson, D.M.

Author_Institution

Dept. of Electr. Eng., Univ. of Washington, Seattle, WA, USA

Volume

2

fYear

2003

Firstpage

1454

Abstract

A low noise, high sensitivity resonant photodetector was realized using an interdigitated silicon photodiode and integrated oscillator circuitry. By placing the photodiode in a resonant loop and using an innovative transduction mechanism, an improvement in the noise performance of the device is observed. Specifically, an increase of 10% in signal to noise ratio is observed of the resonant device over the same device (photodiode) operated at DC.

Keywords

elemental semiconductors; feedback oscillators; flicker noise; photodetectors; photodiodes; semiconductor device noise; silicon; voltage-controlled oscillators; DC operation; Si; high sensitivity resonant photodiode; innovative transduction mechanism; integrated oscillator circuitry; interdigitated silicon photodiode; noise performance; optimized interface electronics; resonant loop; signal-noise ratio; 1f noise; Capacitance; Circuit noise; Noise reduction; Photodetectors; Photodiodes; RLC circuits; Resonance; Ring oscillators; Spatial resolution;

fLanguage

English

Publisher

ieee

Conference_Titel

TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-7731-1

Type

conf

DOI

10.1109/SENSOR.2003.1217050

Filename

1217050