Process induced hillock defects on anisotropically etched silicon

Author

Tan, Song-sheng ; Han, Hongtao ; Boudreau, Robert ; Reed, Michael L.

Author_Institution

Inst. of Metall., Acad. Sinica, Shanghai, China

fYear

1994

fDate

6/16/1905 12:00:00 AM

Firstpage

229

Lastpage

234

Abstract

We have studied the formation of etch hillock defects during anisotropic etching of (100) silicon in KOH. Defect density is correlated with low etchant concentration and high etch temperature. The activation energy for defect formation is 1.2 eV, considerably higher than the energy associated with silicon removal. Examination of defects by electron microscopy suggests that a regrowth process may be involved in defect formation

Keywords

etching; 1.2 eV; KOH; Si; Si (100); activation energy; anisotropically etched silicon; defect formation; electron microscopy; etchant concentration; high etch temperature; process induced hillock defects; regrowth process; silicon removal; Anisotropic magnetoresistance; Electrons; Lithography; Optical fibers; Optical microscopy; Optical surface waves; Optical waveguides; Silicon; Surface morphology; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 1994, MEMS '94, Proceedings, IEEE Workshop on

Conference_Location

Oiso

Print_ISBN

0-7803-1833-1

Type

conf

DOI

10.1109/MEMSYS.1994.555628

Filename

555628

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1729020