Title :
Process induced hillock defects on anisotropically etched silicon
Author :
Tan, Song-sheng ; Han, Hongtao ; Boudreau, Robert ; Reed, Michael L.
Author_Institution :
Inst. of Metall., Acad. Sinica, Shanghai, China
fDate :
6/16/1905 12:00:00 AM
Abstract :
We have studied the formation of etch hillock defects during anisotropic etching of (100) silicon in KOH. Defect density is correlated with low etchant concentration and high etch temperature. The activation energy for defect formation is 1.2 eV, considerably higher than the energy associated with silicon removal. Examination of defects by electron microscopy suggests that a regrowth process may be involved in defect formation
Keywords :
etching; 1.2 eV; KOH; Si; Si (100); activation energy; anisotropically etched silicon; defect formation; electron microscopy; etchant concentration; high etch temperature; process induced hillock defects; regrowth process; silicon removal; Anisotropic magnetoresistance; Electrons; Lithography; Optical fibers; Optical microscopy; Optical surface waves; Optical waveguides; Silicon; Surface morphology; Wet etching;
Conference_Titel :
Micro Electro Mechanical Systems, 1994, MEMS '94, Proceedings, IEEE Workshop on
Conference_Location :
Oiso
Print_ISBN :
0-7803-1833-1
DOI :
10.1109/MEMSYS.1994.555628
