DocumentCode
1729157
Title
Numerical analysis of cosmic radiation-induced failures in power diodes
Author
Weiss, Christian ; Aschauer, Stefan ; Wachutka, Gerhard ; Härtl, Andreas ; Hille, Frank ; Pfirsch, Frank
Author_Institution
Inst. for Phys. of Electrotechnol., Munich Univ. of Technol., Munich, Germany
fYear
2011
Firstpage
355
Lastpage
358
Abstract
Silicon power diodes can run into thermal destruction due to cosmic radiation-induced effects. We performed electro-thermal coupled device simulations in order to explain the failure mechanism. The results are compared to ion irradiation experiments. We find a strong heating located at the point where the incident ion deposits charge with a temperature rise which can explain melting of used materials.
Keywords
cosmic background radiation; elemental semiconductors; failure analysis; power semiconductor diodes; radiation effects; semiconductor device reliability; silicon; Si; cosmic radiation-induced effects; cosmic radiation-induced failure mechanism; electro-thermal coupled device simulations; ion irradiation experiments; numerical analysis; silicon power diodes; thermal destruction; Anodes; Current density; Heating; Plasma temperature; Silicon; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European
Conference_Location
Helsinki
ISSN
1930-8876
Print_ISBN
978-1-4577-0707-0
Electronic_ISBN
1930-8876
Type
conf
DOI
10.1109/ESSDERC.2011.6044161
Filename
6044161
Link To Document