Title :
High speed, high analog bandwidth buck converter using GaN HEMTs for envelope tracking power amplifier applications
Author :
Shinjo, Shintaro ; Young-Pyo Hong ; Gheidi, H. ; Kimball, D.F. ; Asbeck, P.M.
Author_Institution :
Univ. of California, San Diego, La Jolla, CA, USA
Abstract :
We report a DC/DC converter based on GaN HEMTs with a switching frequency above 200 MHz that can be used to generate envelope-modulated power supply voltages for use in envelope tracking power amplifiers. The converter consists of switching circuits using 0.7-um GaN HEMTs, inductor, and low pass filter, and can provide output voltages above 20V. Generation of envelope power supply voltages for 20 MHz LTE signals was demonstrated using 200 MHz switching rates with efficiency of 64% (including dissipation in final and drivers stages; final stage efficiency was 90%). To the best of our knowledge, this is the first demonstration of high speed dc/dc converters for envelope amplifiers using GaN HEMTs.
Keywords :
III-V semiconductors; Long Term Evolution; PWM power convertors; gallium compounds; high electron mobility transistors; inductors; low-pass filters; power amplifiers; switching convertors; wide band gap semiconductors; DC-DC converter; GaN; HEMT; LTE signal; buck converter; envelope modulated power supply voltage; envelope power supply voltage generation; envelope tracking power amplifier; frequency 20 MHz; frequency 200 MHz; inductor; low pass filter; size 0.7 mum; switching circuit; Gallium nitride; HEMTs; MODFETs; Power amplifiers; Switches; Switching frequency; Voltage measurement; Buck converter; GaN HEMTs; envelope tracking (ET); pulsewidth modulation (PWM);
Conference_Titel :
Wireless Sensors and Sensor Networks (WiSNet), 2013 IEEE Topical Conference on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-3104-3
Electronic_ISBN :
978-1-4673-2931-6
DOI :
10.1109/WiSNet.2013.6488618
